Agnitron Technology Featured on Cover of Compound Semiconductor Magazine for D₂-VUV Breakthrough
CHANHASSEN, MN – August 2026 — Agnitron Technology is proud [...]
Agnitron Presents Scalable MOCVD Gallium Oxide Advances at IWGO-6
Chanhassen, Minnesota — Agnitron Technology, Inc. participated in the 6th [...]
Agnitron Highlights the Agilis 100, Its Most Versatile R&D MOCVD Platform
Chanhassen, Minnesota — Agnitron Technology is highlighting the Agilis 100, [...]
The Next Generation Showerhead for Advanced Materials
Chanhassen, Minnesota — Agnitron Technology is introducing its improved close-injection [...]
AlN, Aluminum-Rich AlGaN, Ga₂O₃, and the Next-Generation MOCVD Reactor
Chanhassen, Minnesota —Agnitron Technology is excited to be featured as [...]
Agnitron Scientists Present Advances in AlN and AlScN MOCVD at WOCSEMMAD 2026
Chanhassen, Minnesota — Agnitron Technology is proud to announce that [...]
Agnitron Awarded AFRL Direct to Phase II SBIR for AlScN and AlScN/GaN RF Power Device Development
Agnitron Technology (headquartered in Chanhassen, MN) has been awarded a [...]
Agnitron Technology demonstrates Agilis 100 tool for growth of ScAlN at IFW-Dresden
Agnitron Technology is pleased to announce the successful growth demonstration [...]
Agnitron Technology successfully completes the install of its Agilis 100 MOCVD System at IFW-Dresden
October 24, 2025 – Agnitron Technology, a leading provider of [...]
Agnitron Technology: 2025- Compound Semiconductor Magazine Issues IV and VII
Agnitron Technology, Inc., a pioneer in advanced MOCVD systems and [...]