Agnitron Awarded AFRL Direct to Phase II SBIR for AlScN and AlScN/GaN RF Power Device Development

Agnitron Technology (headquartered in Chanhassen, MN) has been awarded a Direct to Phase II SBIR contract from the Air Force Research Laboratory (AFRL) for the project “Development of Scalable MOCVD Equipment and Processes for AlScN and AlScN/GaN RF Power Device Structures.” The award is especially meaningful because Direct to Phase II is reserved for programs where technical feasibility has already been demonstrated, underscoring the progress Agnitron has already made through its own internal R&D on AlScN growth and related high-temperature precursor delivery technology.

Under this program, Agnitron will develop and deliver a complete AlScN MOCVD growth capability to the AFRL, including reactor hardware, process development, and control software. The work will build on Agnitron’s demonstrated AlScN epitaxy results and its high-temperature metalorganic delivery approach, with the goal of enabling scalable growth of AlScN and AlScN/GaN heterostructures for next-generation RF power devices. By combining proven in-house feasibility with a reactor platform matched to AFRL’s existing tool set, the project is designed to accelerate technology transfer while reducing technical risk.

Agnitron has already proven its AlScN capability both by upgrading multiple field-installed systems that were previously limited to standard nitride growth and by delivering new OEM MOCVD platforms purpose-built for advanced AlScN epitaxy. These capabilities now extend across the full Agilis product line as well as the new horizontal AgniGaN 400 MOCVD system. This combination of field-proven upgrade experience and purpose-built reactor capability positions Agnitron as a proven reliable experienced partner for customers looking to develop and scale AlScN growth.

For more information about Agnitron Technology and the Agilis series of MOCVD systems, please visit www.agnitron.com or email questions to sales@agnitron.com