Selected Publications Authored by Agnitron Staff

Names in bold font are Agnitron staff*.
*Some listed papers are published by staff prior to joining Agnitron and thus are representative of expertise and areas of activity of our staff.

Oxide Materials, Structures and Devices
III-N Materials, Structures, and Devices
Publications Using Agnitron Products

Journal articles

“Low Resistance Ohmic contact on epitaxial MOVPE grown β-Ga2O3 and β-(AlxGa1-x)2O3 films,” F. Alema, C. Peterson, A. Bhattacharyya, S. Roy, S. Krishnamoorthy, and A. Osinsky, IEEE Electron Device Letters, 2022.

“Highly conductive epitaxial β-Ga2O3 and (AlxGa1-x)2O3 films by MOCVD,” F. Alema, T. Itoh, J. S. Speck, and A. Osinsky, Applied Physics Express, 2022.

“Band Offsets of MOCVD Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction,” T. Morgan, J. Rudie, M. Zamani, A. Kuchuk, N. Orishchin, F. Alema, A. Osinsky, R. Sleezer, G. Salamo, and M. Ware, ACS Applied Materials & Interfaces, 2022.

“β-(AlxGa1−x)2O3/Ga2O3 heterostructure Schottky diodes for improved VBR2/RON,” P. P. Sundaram, F. Alema, A. Osinsky, and S. J. Koester, Journal of Vacuum Science & Technology A, 2022. 40(4): p. 043211.

“Optimizing gallium oxide growth,” F. Alema, A. Fine, A. Osinsky, A. Bhattacharyya, and S. Krishnamoorthy, Compound Semiconductor Magazine. 2022. p. 16.

“4.4 kV β-Ga2O3 MESFETs with Power Figure of Merit exceeding 100 MW/cm2,” A. Bhattacharyya, S. Sharma, F. Alema, P. Ranga, S. Roy, C. Peterson, G. Seryogin, A. Osinsky, U. Singisetti, and S. Krishnamoorthy, Applied Physics Express, 2022. 15: p. 061001.

“Multi-kV Class β-Ga₂O₃ MESFETs With a Lateral Figure of Merit Up to 355 MW/cm²,” A. Bhattacharyya, P. Ranga, S. Roy, C. Peterson, F. Alema, G. Seryogin, A. Osinsky, and S. Krishnamoorthy, IEEE Electron Device Letters, 2021. 42(9): p. 1272-1275.

“Vertical β-Ga2O3 Field Plate Schottky Barrier Diode from Metal-Organic Chemical Vapor Deposition,” E. Farzana, F. Alema, W.Y. Ho, A. Mauze, T. Itoh, A. Osinsky, and J.S. Speck, Appl. Phys. Lett., 2021.

“Ge doping of β-Ga2O3 by MOCVD,” F. Alema, G. Seryogin, A. Osinsky, and A. Osinsky, APL Materials, 2021. 9(9): p. 091102:1-11.

“β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels,” Zhang, Y., A. Mauze, F. Alema, A. Osinsky, T. Itoh, and J. S. Speck, Japanese Journal of Applied Physics, 2020. 60: p. 014001.

“MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor,” G. Seryogin, F. Alema, N. Valente, H. Fu, E. Steinbrunner, A.T. Neal, S. Mou, A. Fine, and A. Osinsky, Applied Physics Letters, 2020. 117(26): p. 262101.

“Tuning the responsivity of monoclinic $({In}_x{Ga}_{1-x})_2{O}_3$ solar-blind photodetectors grown by metal organic chemical vapor deposition,” Hatipoglu, I., P. Mukhopadhyay, F. Alema, T.S. Sakthivel, S. Seal, A. Osinsky, and W.V. Schoenfeld, Journal of Physics D: Applied Physics, 2020. 53(45): p. 454001.

“Low 1014 cm-3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD” F. Alema, Y. Zhang, A. Osinsky, N. Orischin, N. Valente, A. Mauze, and J. S. Speck, APL Mater. 7, 021110 (2020)

“High Responsivity (InxGa(1-x))2O3 Solar-Blind Photodetectors Grown by MOCVD” I. Hatipoglu, P. Mukhopadhyay, W. Schoenfeld, F. Alema, and A. Osinsky, manuscript under review in Sensors & Actuators: A. Physical

“H2O vapor assisted growth of β-Ga2O3 by MOCVD” F. Alema, A. Osinsky, Y. Zhang, B. Hertog, A. Mauze, T. Itoh and J. S. Speck, Manuscript in preparation.

“Low temperature electron mobility exceeding 104 cm2/Vs in MOCVD grown β-Ga2O3” F. Alema, Y. Zhang, A. Osinsky, N. Valente, A. Mauze, T. Itoh and J. S. Speck; APL Mater. 7, 121110 (2019)

“MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/Vs at room temperature” Y.  Zhang, F. Alema, A. Mauze, O. S. Koksaldi, R. Miller, A. Osinsky, and James S. Speck, APL Mater. 7, 022506 (2019)

“Epitaxial growth of Co3O4 thin films using Co(dpm)3 by MOCVD” F. Alema, A. Osinsky, P. Mukhopadhyay, W. V. Schoenfeld, Journal of Crystal Growth, Vol. 525, 125207 (2019)

“Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3” Y. Zhang, A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, Applied Physics Express, 12 044005 (2019).

“Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film” F. Alema, B. Hertog, P. Mikhopadhyay, Y. Zhang, A. Mauze, A. Osinsky, W. Shoenfeld, J. S. Speck, and T. Vogt. APL Mater. 7, 022527 (2019)

“Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3 / β-Ga2O3 Heterostructures Growth for Power Electronics” R. Miller, F. Alema and A. Osinsky, IEEE Trans. Semicond. Manuf. 31(4), 467 (2018)

“Accelerating the growth of gallium Oxide” R. Miller, F. Alema, A. Osinsky, Compound Semiconductor Magazine 24(4), 18 (2018)

“Fast growth rate of epitaxial β-Ga2O3 by close coupled shower head MOCVD Growth” F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, J. Cryst. Growth 475 (2017) 77.

“Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film” F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, J.Speck, Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051M.

“MgZnO Grown by Molecular Beam Epitaxy on N-Type β-Ga2O3 for UV Schottky Barrier Solar-Blind Photodetectors” M. Toporkov, P. Mukhopadhyay, H. Ali, V. Beletsky, F. Alema, A. Osinsky, W.V. Schoenfeld, Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051N

“Growth of High Mg Content Wurtzite MgZnO Epitaxial Films via Pulsed Metal Organic Chemical Vapor Deposition,” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, A. Osinsky, and W. V. Schoenfeld, Journal of Crystal Growth, 435 6-11, 2016.

“Temperature and Pulse Duration Effects on the Growth of MgZnO via Pulsed Metal Organic Chemical Vapor Deposition,” F. Alema, O. Ledyaev, R. Miller, A. Osinsky, and W. V. Schoenfeld, Japanese Journal of Applied Physics, 2016.

“Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51),” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, A. Osinsky and W.V. Schoenfeld, MRS Advances, pp 1-6, 2016.

“High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD),” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, B. Hertog, A. V. Osinsky, W. V. Schoenfeld, Invited paper 9749-33, SPIE Photonics West, February 13-18, 2016.

“High-gain Zn1-xMgxO-based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates,” S. Olson, H. Liu, O. Ledyaev, B. Hertog, A. Osinsky, W. V. Schoenfeld, Phys. Stat. Sol. RRL 9, 82, 2015.

“High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy,” W.V. Schoenfeld, M. Wei, R.C. Boutwell, H. Liu, Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871P, March 8, 2014.

“Growth of high-quality ZnO thin films with a homo nucleation on sapphire,” Wei,R. C. Boutwell, N. Faleev, A. Osinsky and W. V. Schoenfeld, J. Vac. Sci. Technol. B 31, 041206, 2013

“Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film,” F. Alema, B. Hertog, O. Ledyaev, D. Volovik, G. Thoma, R. Miller, A. Osinsky, P. Mukhopadhyay, S. Bakhshi, H. Ali, and W. V. Schoenfeld, Physica status solidi (a), 214, 1600688 (2017)

“High responsivity solar-blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition,” F. Alema, B. Hertog, O. Ledyaev, D. Volovik, R. Miller, A. Osinsky, S. Bakhshib, and W. V. Schoenfeld, Sensors and Actuators A: Physical 249, 263 (2016)

Book chapters

“MOCVD Growth of β-Ga2O3 Epitaxy, in β-Ga2O3: Wide-bandgap Semiconductor Theory and Applications,” F. Alema, G. Seryogin, and A. Osinsky, J.S. Speck and E. Farzana, Editors. 2022, American Institute of Physics.

“Metal Organic Chemical Vapor Deposition 1 – Homoepitaxial and heteroepitaxial growth of Ga2O3 and related alloys” by F. Alema and A. Osinsky, in “Gallium Oxide – Materials Properties, Crystal Growth, and Devices,” edited by M. Higashiwaki and S. Fujita (Springer Nature, Switzerland, 2020).

“Optical Properties of ZnO Alloys,” J. Muth and A. Osinsky (2007). in: I. L. K. Gertrude F. Neumark, H. Jiang (Eds.), Wide Bandgap Light Emitting Materials And Devices, Wiley-VCH, 2007, pp. 179-201

“ZnO-Based Light Emitters” by A. Osinsky and S. Karpov, in “Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties and Applications,” edited by Chennupati Jagadish and Stephen Pearton (Elsevier Science, 2006).

Conference Presentations

“High Purity n-type β-Ga2O3 Films with 1013 cm-3 Residual Accepter Concentration by MOCVD,” A. Osinsky, and F. Alema, in The 5th U.S. Gallium Oxide Workshop (GOX2022). 2022: Washington D.C.

“Highly conductive β-Ga2O3 and (AlxGa1-x)2O3 epitaxial films by MOCVD,” F. Alema, T. Itoh, J. Speck, and A. Osinsky, in The 5th U.S. Gallium Oxide Workshop (GOX2022). 2022: Washington D.C.

“Optimization of MOCVD Grown In-situ Dielectrics for β-Ga2O3,” G.Wang, F. Alema, J. Chen, A. Osinsky, C. Gupta, and S. Pasayat, in The 5th U.S. Gallium Oxide Workshop (GOX2022). 2022: Washington D.C.

“Grafted Si/Ga2O3 pn Diodes,” H. Jang, D. Kim, J. Gong, F. Alema, A. Osinsky, K. Chabak, G. Jessen, G.Vincent, S. Pasayat, C. Gupta, and Z. Ma, in The 5th U.S. Gallium Oxide Workshop (GOX2022). 2022: Washington D.C.

“Record Low Specific Resistance Ohmic Contacts to Highly Doped MOVPE-Grown β-Ga2O3 and β-(AlXGa1-X)2O3 Epitaxial Films,” C. Peterson, F. Alema, S. Roy, A. Bhattacharyya, A. Osinsky, and S. Krishnamoorthy, in The 5th U.S. Gallium Oxide Workshop (GOX2022). 2022: Washington D.C.

“Band Offsets of MOCVD Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3(010) Heterojunctions,” T. Morgan, J. Rudie, M. Zamani-Alavijeh, A. Kuchuk, N. Orishchin, F. Alema, A. Osinsky, R. Sleezer, G. Salamo, and M. Ware, in The 5th U.S. Gallium Oxide Workshop (GOX2022). 2022: Washington D.C.

“MOCVD β-Ga2O3 Gate-recessed MESFET,”  H. Masten,  J. Lundh, J. Spencer, F. Alema, A. Osinsky, A. Jacobs, K. Hobart, and M. Tadjer, in The 5th U.S. Gallium Oxide Workshop (GOX2022. 2022: Washington D.C.

“Heterostructures and Superlattices Doped in a Wide Range of Electron Concentrations,” F. Alema, and A. Osinsky, MOCVD Growth of High-Quality β-(AlxGa1-x)2O3 /β-Ga2O3  in Materials Research Society. 2022: Honolulu, HI.

“MOVPE-Grown β-Ga2O3 Lateral Power Transistors with VBR Exceeding 4 kV,” A.Bhattacharyya,  S. Sharma, F. Alema, P. Ranga, S. Roy, C. Peterson, G. Seryogin, A. Osinsky, U. Singisetti, and S. Krishnamoorthy, in Material Research Society 2022: Honolulu, HI.

“The realization of the highest purity  b-Ga2O3 epitaxial Films by MOCVD with a record LT electron mobility exceeding 23,000 cm2/Vs,” A. Osinsky, and F. Alema,  in WOCSEMMAD 2022: Destin, FL.

“β-Ga2O3 epitaxy and power devices from metal-organic chemical vapor deposition,” E. Farzana, F. Alema, T. Itoh, N. Hendricks, A. Mauze, A. Osinsky, and J. Speck,  in SPIE OPTO. 2022, SPIE.

” High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications.” M. Tadjer, F. Alema, A. Osinsky, M. Mastro, N. Nepal, J. Woodward, R. Myers-Ward, E. Glaser, J. Freitas, A. Jacobs, J. Gallagher, A. Mock, D. Pennachio, J. Hajzus, M. Ebrish, T. Anderson, K. Hobart, J. Hite, and C. Eddy,  SPIE OPTO. Vol. 11687. 2021: SPIE.

“High Purity Gallium Oxide Epitaxial Films by MOCVD” A. Osinsky, F. Alema, Yuewie Zhang, Akhil Mauze, James Speck, WOCSEMMAD, Palm Springs, CA 2020

“Recent progress in the MOCVD growth of device quality β-Ga2O3 films” F. Alema, A. V. Osinsky, Yuewei Zhang, Akhil Mauze, James S. Speck, Invited Paper 11281-76, SPIE Photonics West, San Francisco, CA,1-6 February 2020.

“Epitaxial growth of β-Ga2O3 and related alloys by MOCVD” A. Osinsky and F. Alema, The 5th International Conference on Advanced Electromaterials (ICAE), Jeju, Korea, 5-8 November 2019.

“Device Quality β-Ga2O3 and Related Alloys by MOCVD” A. Osinsky, F. Alema, Y. Zhang, A. Mauze, J. Speck, P. Mukhopadhyay, and W. V. Schoenfeld, AVS 66th International Symposium & Exhibition-Thin Film Division, Columbus, OH, 20-25 October 2019.

“Homoepitaxial β-Ga2O3 thin films growth by MOCVD using various oxygen sources” A. Osinsky, F. Alema, Y. Zhang, A. Mauze, and J. S. Speck, IWGO Columbus, OH, 12-15 August 2019

“Low background carrier concentration in an MOCVD-grown β-Ga2O3” Nazar Orishchin, Fikadu Alema, Andrei Osinsky, Yuewei Zhang, Akhil Mauze, and James Speck, ICCGE-19/OMVPE-19, Keystone, CO, July 28-August 2, 2019.

“β-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system” Nazar Orishchin, Fikadu Alema and Andrei Osinsky, CS-MANTECH, Minneapolis, MN, April 29th -May 2nd 2019

“Low background impurity in MOCVD grown β-Ga2O3 “Andrei Osinsky, Fikadu Alema, Akhil Mauze, James Speck, WOCSEMMAD 2019

“Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics” R. Miller, F. Alema, A. Osinsky, Paper presented at the CS-MANTECH, Austin, TX, 7–10 May 2018

“Device quality β-Ga2O3 and β-(AlxGa1-x)2O3 heterostructures—control of doping and impurity incorporation in MOCVD process” F. Alema, A. Osinsky, Y. Zhang, A. Mauze, J.S. Speck, Paper presented at Material Research Society, Boston, MA, 25–28 November 2018.

“High Performance β-Ga2O3 based vertical solar blind Schottky Photodiode” Fikadu Alema, Brain Hertog, Andrei Osinsky, Yuewei Zhang, Akhil Mauze, James S. Speck, Partha Mukhopadhyay, and Winston V. Schoenfeld, MRS Fall 2018, Boston, MA.

“MOCVD growth of high-quality epitaxial β-Ga2O3 and related alloy structures” Fikadu Alema, Ross Miller, Andrei Osinsky, Akhil Mauze, James Speck, ICMOVPE XIX, Nara, Japan, June 3-8, 2018

“Growth of Ga2O3 and AlGaO epitaxial structures by MOCVD” Andrei Osinsky, Fikadu Alema, Ross Miller, Akhil Mauze, James Speck, Invited Paper 10533-8, SPIE Photonics West, San Francisco, CA,27 January-1February 2018

“Commercial MOCVD for The Growth of High Quality Epitaxial β-Ga2O3 and Related Alloys” Ross Miller, Fikadu Alema and Andrei Osinsky, IWGO 2018

“Transport Studies of Unintentionally Doped MOCVD grown β-Ga2O3” Adam T. Neal, Shin Mou, Fikadu Alema, Andrei Osinsky, John D. Blevins, Kelson D. Chabak, Gregg H. Jessen, IWGO 2018

“Device quality β-(AlxGa1-x)2O3/β-Ga2O3 heterostructures grown by MOCVD” F. Alema, R.Miller, A. Osinsky, Akhil Mauze, James S. Speck, Adam T. Neal, and Shin Mou, IWGO 2018

“β-Ga2O3 and β-(Alx, Ga1-x)2O3 by MOCVD” A. Osinsky, F. Alema, R. Miller, Akhil Mauze, James Speck, WOCSEMMAD 2018

“Bandgap Engineering and MOCVD Growth of High-Quality β-(Al,Ga)2O3/Ga2O3 Heterostructures for Power Switches” A. Osinsky, F. Alema, B. Hertog, E. Ahmadi, F. Wu, J. Speck, B. H Nieters, T. Vogt, MRS Fall 2017, Boston, MA.

“High-Quality Epitaxial β-Ga2O3 Growth by Close Coupled Showerhead MOCVD” F. Alema, B. Hertog, A. Osinsky, E. Ahmadi, F. Wu, J. Speck, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, MRS Fall 2017, Boston, MA.

“Experimental Study and Modeling of Ga2O3Epitaxial Growth by MOCVD in a CIS Reactor”, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B. Hertog, and A. Osinsky, IWGO 2017, Parma, Italy.

“Epitaxial Growth of Ga2O3 by Metal Organic Chemical Vapor Deposition from Various Precursors,” F. Alema, O. Ledyaev, R. Miller, B. Hertog, A. Osinsky, and Winston V. Schoenfeld, ICMOVPE-XVIII, San Diego, CA July 10-15, 2016.

“Pulsed-MOCVD Epitaxial Growth of High Quality, High Mg Content MgZnO Thin Film,” F. Alema, O. Ledyaev, R. Miller, B. Hertog, A. Osinsky, and W. V. Schoenfeld, ICMOVPE-XVIII, San Diego, CA July 10-15, 2016.

“Substrate Temperature Induced Band Gap Tuning of MgZnO via Pulsed Metal Organic Chemical Vapor Deposition (PMOCVD),” F.Alema, O. Ledyaev, R. Miller, V. Beletsky, B. Hertog, A. Osinsky, W. V. Schoenfeld, MRS Spring 2018, Phoenix, AZ, March 28-April 1, 2016.

“Epitaxial Growth of Ga2O3 By MOCVD Using Oxygen: Experimental Study and Model Verification” M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B.Hertog, A. Osinsky, ACCGE-21, 2016. Santa Fe, NM.

“Epitaxial β-Ga2O3 thin Film by Metal Organic Chemical Vapor Deposition” F. Alema, B. Hertog, O. Ledyaev, G. Thoma, R. Miller, A. Osinsky, P. Mukhopadhyay, W.V. Schoenfeld, MRS Fall 2016, Boston, MA.

“Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for the Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51),” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, A. Osinsky, and W.V. Schoenfeld, MRS Fall 2015, Boston, MA. November 29-December 4, 2015.

“Growth of High Mg Content MgxZn1-xO Epitaxial Film via Pulsed-Metal Organic Chemical Vapor Deposition (MOCVD),” F. Alema, O. Ledyaev, R. Miller, and A. Osinsky, European Material Research Society, Lille, France, May 11-15, 2015.

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