Agnitron Scientists Present Advances in AlN and AlScN MOCVD at WOCSEMMAD 2026

Dr. Fikadu Alema, Principal Staff Scientist at Agnitron Technology, presentation focused on Agnitron’s progress in developing high-quality conductive AlN and Al(Ga)N using multiple MOCVD reactor platforms, including the Agilis 100 RIS reactor and the company’s newly introduced horizontal AgniGaN 400 MOCVD system. Dr. Alema showed that Agnitron has grown more than 200 AlN layers across multiple reactors, with more than 90% demonstrating conductivity. Through continued process optimization, Agnitron has achieved Si-doped AlN with free carrier concentrations up to ~3.8 × 10¹⁶ cm⁻³, electron mobility of ~15 cm²/V·s, and resistivity as low as ~11 Ω·cm. His presentation also discussed Agnitron’s ongoing work integrating UV sources into MOCVD reactors, including both Hg-Xe and D₂-VUV sources, to explore above-bandgap exposure during AlN growth and further improve dopant activation and electrical performance.

Agnitron’s second presentation, delivered by Process Engineer Will Brand, summarized Agnitron’s development of AlScN structures grown by MOCVD using novel scandium precursors and Agnitron’s high-temperature metalorganic delivery technology. AlScN is emerging as an important material for high-temperature ferroelectric, RF, and power device applications, while remaining compatible with traditional GaN technology. Brand highlighted Agnitron’s ability to grow wurtzite-phase AlScN with scandium contents up to 40%, excellent 2-inch wafer uniformity, and device-relevant heterostructures including AlScN/AlN/GaN/SiC HEMTs. These structures demonstrated 2DEG formation with mobility up to ~1140 cm²/V·s and sheet charge density up to ~2.5 × 10¹³ cm⁻². The presentation also covered ferroelectric AlScN films grown on Pt/Si and Si substrates, with demonstrated ferroelectric response in metal-ferroelectric-metal structures.