Agnitron Technology demonstrates Agilis 100 tool for growth of ScAlN at IFW-Dresden

Agnitron Technology is pleased to announce the successful growth demonstration of GaN, AlGaN, and—most notably—ScAlN on our advanced epitaxial growth platform, the Agilis 100. ScAlN is an especially exciting material due to its ultra-wide bandgap, high piezoelectric coefficients, and strong spontaneous polarization. These properties position ScAlN to play a transformative role in next-generation high-frequency, high-power, and acoustic semiconductor devices. The successful demonstration underscores Agnitron’s continued leadership in enabling advanced materials development for cutting-edge applications.

The system was delivered and installed in Q4 2025, with growth demonstrations completed in January 2026. All results met or exceeded the customer’s growth expectations, validating both process performance and system capability. The tool incorporates several unique features, including Agnitron’s patented showerhead design and a high-temperature metal-organic delivery apparatus engineered specifically for low vapor pressure precursors. IFQ-Dresden specializes in the formulation of these precursors.  These innovations provide enhanced precursor stability, uniformity, and repeatability—critical factors for emerging materials such as ScAlN.

The customer’s strong satisfaction with the equipment performance, technical support, and the expertise of the Agnitron Technology team has resulted in the purchase of a second system, scheduled for delivery in mid-2026. This follow-on order reflects the confidence placed in Agnitron as a trusted partner for advanced materials growth and reinforces our commitment to delivering high-performance solutions for the semiconductor research and production communities.

You can learn more about Agnitron and IFW-Dresden at their respective websites,  https://agnitron.com/ & https://www.ifw-dresden.de/

Agilis 100 & IFW Director Devi