Agnitron Highlights the Agilis 100, Its Most Versatile R&D MOCVD Platform

Chanhassen, Minnesota —

Agnitron Technology is highlighting the Agilis 100, the company’s most popular and customizable MOCVD platform for advanced research and process development. Designed for researchers who need maximum flexibility without moving immediately to a large production-scale tool, the Agilis 100 combines a compact footprint with high-temperature growth capability, modular gas delivery, and Agnitron’s Imperium™ MOCVD control platform. The system supports up to a 1 × 3-inch wafer configuration, induction heating up to 1700°C, multiple alkyl and dopant source channels, oxygen precursor capability, and a flexible reactor architecture designed to meet evolving R&D requirements.

What makes the Agilis 100 especially powerful is its ability to support a wide range of material systems and reactor configurations. The platform can be configured for remote-injection showerhead (RIS) or close-injection showerhead (CIS) operation, allowing customers to adapt the tool for different chemistries, growth processes, and process objectives with minimal hardware disruption. This flexibility has made the Agilis 100 an important platform for growth of AlN, AlGaN, GaN, InGaN, β-Ga₂O₃, ScAlN/AlScN, YAlN, ZnO, MgZnO, NbN, III-V As/P alloys, TMDs, h-BN, SiC, and other emerging materials. The Agilis platform is also designed for high-temperature precursor delivery, in-situ UV exposure, UV/blue reflectometry, and advanced process monitoring, making it a practical tool for researchers pushing beyond conventional nitride and oxide growth.

The Agilis 100 is more than a flexible hardware platform; it is a proven materials-development system. In recent work, Agnitron has used Agilis 100 RIS and CIS reactors to grow high-quality AlN films on native AlN substrates, with structural results including an XRD rocking-curve FWHM of about 21 arcsec and RMS roughness around 0.26 nm for ~12 µm-thick AlN films. Electrical testing across more than 150 AlN samples grown on Agilis reactors at Agnitron and Arizona State University has shown free-carrier concentrations from approximately 3 × 10¹⁴ cm⁻³ to 4 × 10¹⁶ cm⁻³ and mobilities from about 6 to 221 cm²/V·s. Nearly all Agilis-grown AlN samples were conductive, with many below 30 Ω·cm and the lowest reported resistivity around 11 Ω·cm.

Agnitron has also demonstrated the Agilis platform’s ability to support next-generation process upgrades, including high-temperature precursor delivery for low-vapor-pressure sources and direct in-situ UV exposure. The Agilis 100 has been used as a foundation for Sc-containing nitride work, including AlScN/ScAlN process development using heated precursor delivery, and Agnitron’s recent technical work notes that high-temperature Sc precursor delivery on the Agilis 100 can heat the source above 150°C and the gas delivery network above 200°C. The same platform direction also supports future non-traditional MOCVD/CVD development, including refractory precursor validation such as ZrC-focused growth studies when configured for dedicated development use.

For professors, university groups, national labs, and advanced R&D teams, the Agilis 100 is an ideal entry point into serious MOCVD research. It gives users a platform that can start with one material system and grow with the program: nitrides today, oxides tomorrow, Sc-containing alloys next year, and custom high-temperature precursor work as research needs evolve. With Agnitron’s factory and field support, growth demonstration during installation, and field-upgradable architecture, the Agilis 100 is designed to help researchers move from first experiments to publishable, fundable, and transition-ready results.

For more information about Agnitron Technology and the Agilis series of MOCVD systems, please email questions to sales@agnitron.com