Members of the technical staff from Agnitron Technology recently attended the 5th U.S. Gallium Oxide Workshop in Washington D.C., to present information on the latest developments in the growth and fabrication of gallium oxide (Ga2O3 ) materials and systems. Dr. Fikadu Alema (Principal Scientist) has given a talk “High Purity n-type β-Ga2O3 Films with 1e13 cm-3 Residual Accepter Concentration by MOCVD”
There were also various collaborative studies with Agnitron presented in posters during the 3-day event.
“Exploration of MOCVD based AlOxNy as in-situ gate dielectric for Ga2O3”, a collaborative research with Prof. Chirag Gupta and Prof. Shubhra Pasayat of the University of Wisconsin, Madison.
“Highly conductive β-Ga2O3 and (AlxGa1-x)2O3 epitaxial films by MOCVD”, collaborative research with Prof. Jim Speck and Takeki Itoh of UCSB.
“Record Low Specific Resistance Ohmic Contacts to Highly Doped MOVPE-Grown β-Ga2O3 and β-(AlXGa1-X)2O3” collaborative research with Prof. Sriram Krishnamoorthy, Carl Peterson of UCSB, and A. Bhattacharyya, University of Utah.
Dr. Alema presenting on recent advances with the Agilis series MOCVD system Dr. Andrei Osinsky CEO, Agnitron Technology was in attendance at the meetings to discuss ongoing projects and new project ideas with other leaders in the field.
Dr. Osinsky and Dr. Alema with Dr. Zhenqiang “Jack” Ma, University of Wisconsin Madison discuss wafer bonding techniques developed at UW using Agnitron Ga2O3 epitaxial structures.