Agnitron presents an invited talk on “MOCVD growth of β-(AlGa)2O3 on β-Ga2O3 using N2O” at the SPIE Photonics West conference in San Francisco, CA, held 28-Jan to 2-Feb ’23.

Agnitron is a leader in Ga₂O₃ material growth as well as equipment design & development for this wide bandgap material system.  The extensive laboratory work by Agnitron has been recognized by the scientific community worldwide.  The talk summarized continued progress in the MOCVD growth of high-quality β-(AlGa)₂O₃ alloys needed for the realization of efficient power devices, such as modulation-doped field effect transistors (MODFETs). It also discussed the suitability of various metalorganic sources and oxidizers to achieve high Al content β-(AlGa)₂O₃. Recent results were presented on the MOCVD growth of smooth and phase pure (010) β-(Al_xGa_1-x)₂O₃ layers with record Al composition (x) of ~30% as well as nitrogen doping of β-(AlGa)₂O₃ using N₂O as an oxidizer. The presentation was given by Mr. Takeki Itoh, our collaborator from the University of California, Santa Barbara, on behalf of Agnitron team.

SPIE Photonics West is a gathering of leaders from academia, industry, and government to learn and discuss important aspects of optics and photonics activities being researched around the world.

Agnitron Technology, Inc. is a compound semiconductor technology company and supports MOCVD equipment related needs of R&D and production users. We strive to deliver products and services to enable development of advanced semiconductor material and device technologies and products which improve quality of life and the environment.