Agnitron’s CEO, Andrei Osinsky to present recent advances in MOCVD grown β-Ga2O3 films at E-MRS September 18-21, 2023, in Warsaw Poland.

Dr. Osinsky’s presentation is titled, “Advances in MOCVD of β-Ga2O3 epitaxial film growth, in-situ etch, and regrowth.”  The talk will review results achieved in recent months using one of Agnitron’s Agilis 100 MOCVD tools installed at its Chanhassen, MN headquarters.  The presentation will highlight the latest growth and in-situ etch techniques employed by Agnitron scientists.  In addition, he will discuss doping characteristics of β-Ga2O3.  The exploration of various precursors to achieve high-purity, carbon free epitaxy will also be presented.  He will discuss various process parameters and reactor geometries used to obtain world class material results included some of the highest mobility MOCVD grown β-Ga2O3 reported.

Dr. Osinsky’s presentation can be seen at the upcoming E-MRS meetings in Warsaw September 18-21, 2023. Agnitron can be contacted at and to view the website for E-MRS meeting in Warsaw, visit

Share This Story, Choose Your Platform!