Names in bold font are Agnitron staff*.

Oxide Materials, Structures and Devices

Journal articles

“Low 1014 cm-3 free carrier concentration in epitaxial β-Ga2O3 grown by MOCVD” F. Alema, Y. Zhang, A. Osinsky, N. Orischin, N. Valente, A. Mauze, and J. S. Speck, APL Mater. 7, 021110 (2020)

“High Responsivity (InxGa(1-x))2O3 Solar-Blind Photodetectors Grown by MOCVD” I. Hatipoglu, P. Mukhopadhyay, W. Schoenfeld, F. Alema, and A. Osinsky, manuscript under review in Sensors & Actuators: A. Physical

“H2O vapor assisted growth of β-Ga2O3 by MOCVD” F. Alema, A. Osinsky, Yuewei Zhang, Brian Hertog, Akhil Mauze, Takeki Itoh and James S. Speck, Manuscript in preparation.

“Low temperature electron mobility exceeding 104 cm2/Vs in MOCVD grown β-Ga2O3F. Alema, Yuewei Zhang, A. Osinsky, N. Valente, Akhil Mauze, Takeki Itoh and James S. Speck; APL Mater. 7, 121110 (2019)

“MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/Vs at room temperature” Yuewei Zhang, F. Alema, Akhil Mauze, Onur S. Koksaldi, Ross Miller, A. Osinsky, and James S. Speck, APL Mater. 7, 022506 (2019)

“Epitaxial growth of Co3O4 thin films using Co(dpm)3 by MOCVD” F. Alema, A. Osinsky, Partha Mukhopadhyay, Winston V. Schoenfeld, Journal of Crystal Growth, Vol. 525, 125207 (2019)

“Near unity ideality factor for sidewall Schottky contacts on un-intentionally doped β-Ga2O3” Y. Zhang, A. Mauze, F. Alema, A. Osinsky, and J. S. Speck, Applied Physics Express12 044005 (2019).

“Solar blind Schottky photodiode based on an MOCVD-grown homoepitaxial β-Ga2O3 thin film” F. Alema, Brian Hertog, Partha Mikhopadhyay, Yuewei Zhang, Akhil Mauze, Andei Osinsky, Winston Shoenfeld, James S. Speck, and Timothy Vogt.  APL Mater. 7, 022527 (2019)

“Epitaxial β-Ga2O3 and β-(AlxGa1-x)2O3 / β-Ga2O3 Heterostructures Growth for Power Electronics” R. Miller, F. Alema and A. Osinsky, IEEE Trans. Semicond. Manuf. 31(4), 467 (2018)

“Accelerating the growth of gallium Oxide” R. Miller, F. Alema, A. Osinsky, Compound Semiconductor Magazine 24(4), 18 (2018)

“Fast growth rate of epitaxial β-Ga2O3 by close coupled shower head MOCVD Growth” F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, J. Cryst. Growth 475  (2017) 77.

“Vertical solar blind Schottky photodiode based on homoepitaxial Ga2O3 thin film” F. Alema, B. Hertog, A. Osinsky, P. Mukhopadhyay, M. Toporkov, W. V. Schoenfeld, E. Ahmadi, J.Speck, Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051M.

“MgZnO Grown by Molecular Beam Epitaxy on N-Type β-Ga2O3 for UV Schottky Barrier Solar-Blind Photodetectors” M. Toporkov, P. Mukhopadhyay, H. Ali, V. BeletskyF. Alema, A. Osinsky, W.V. Schoenfeld, Proc. SPIE 10105, Oxide-based Materials and Devices VIII, 101051N

“Growth of High Mg Content Wurtzite MgZnO Epitaxial Films via Pulsed Metal Organic Chemical Vapor Deposition,” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, A. Osinsky, and W. V. Schoenfeld, Journal of Crystal Growth, 435 6-11, 2016.

“Temperature and Pulse Duration Effects on the Growth of MgZnO via Pulsed Metal Organic Chemical Vapor Deposition,” F. Alema, O. Ledyaev, R. Miller, A. Osinsky, and W. V. Schoenfeld, Japanese Journal of Applied Physics, 2016.

“Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51),” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, A. Osinsky and W.V. Schoenfeld, MRS Advances, pp 1-6, 2016.

“High Mg content wurtzite phase MgxZn1-xO epitaxial film grown via pulsed-metal organic chemical vapor deposition (PMOCVD),” F.Alema, O. Ledyaev, R. Miller, V. Beletsky, B. Hertog, A. V. Osinsky, W. V. Schoenfeld, Invited paper 9749-33, SPIE Photonics West, February 13-18, 2016.

“High-gain Zn1-xMgxO-based ultraviolet photodetectors on Al2O3 and LiGaO2 substrates,” S. Olson, H. Liu, O. Ledyaev, B. Hertog, A. Osinsky, W. V. Schoenfeld, Phys. Stat. Sol. RRL 9, 82, 2015.

“High response solar-blind MgZnO photodetectors grown by molecular beam epitaxy,” W.V. Schoenfeld, M. Wei, R.C. Boutwell, H. Liu, Proc. SPIE 8987, Oxide-based Materials and Devices V, 89871P, March 8, 2014.

“Growth of high-quality ZnO thin films with a homo nucleation on sapphire,” Wei,R. C. Boutwell, N. Faleev, A. Osinsky and W. V. Schoenfeld, J. Vac. Sci. Technol. B 31, 041206, 2013

“Solar blind photodetector based on epitaxial zinc doped Ga2O3 thin film,” F. Alema, B. Hertog, O. Ledyaev, D. Volovik, G. Thoma, R. Miller, A. Osinsky, P. Mukhopadhyay, S. Bakhshi, H. Ali, and W. V. Schoenfeld, Physica status solidi (a), 214, 1600688 (2017)

“High responsivity solar-blind photodetector based on high Mg content MgZnO film grown via pulsed metal organic chemical vapor deposition,” F. Alema, B. Hertog, O. Ledyaev, D. Volovik, R. Miller, A. Osinsky, S. Bakhshib, and W. V. Schoenfeld, Sensors and Actuators A: Physical 249, 263 (2016)

 

Book chapters

“Metal Organic Chemical Vapor Deposition 1 – Homoepitaxial and heteroepitaxial growth of Ga2O3 and related alloys” by  F. Alema and A. Osinsky, in “Gallium Oxide – Materials Properties, Crystal Growth, and Devices,” edited by Masataka Higashiwaki and Shizuo Fujita (Springer Nature, Switzerland, 2020), in publication.

“ZnO-Based Light Emitters” by A. Osinsky and S. Karpov, in “Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties and Applications,” edited by Chennupati Jagadish and Stephen Pearton (Elsevier Science, 2006).

 

Conference Presentations

“High Purity Gallium Oxide Epitaxial Films by MOCVD” Andrei Osinsky, Fikadu Alema, Yuewie Zhang, Akhil Mauze, James Speck, WOCSEMMAD, Palm Springs, CA  2020

  “Recent progress in the MOCVD growth of device quality β-Ga2O3 films” Fikadu Alema, Andrei V. Osinsky, Yuewei Zhang, Akhil Mauze, James S. Speck, Invited Paper 11281-76, SPIE Photonics West, San Francisco, CA,1-6 February 2020.

“Epitaxial growth of β-Ga2O3 and related alloys by MOCVD” Andrei Osinsky and Fikadu Alema, The 5th International Conference on Advanced Electromaterials (ICAE), Jeju, Korea, 5-8 November 2019.

“Device Quality β-Ga2O3 and Related Alloys by MOCVD” Andrei Osinsky, Fikadu Alema, Yuewei Zhang, Akhil Mauze, James Speck, Partha Mukhopadhyay, and Winston V. Schoenfeld, AVS 66th International Symposium & Exhibition-Thin Film Division, Columbus, OH, 20-25 October 2019.

“Homoepitaxial β-Ga2O3 thin films growth by MOCVD using various oxygen sources” Andrei Osinsky, Fikadu Alema,Yuewei Zhang,  Akhil Mauze, and James S. Speck, IWGO Columbus, OH, 12-15 August  2019

“Low background carrier concentration in an MOCVD-grown β-Ga2O3Nazar Orishchin, Fikadu Alema, Andrei Osinsky, Yuewei Zhang, Akhil Mauze, and James Speck, ICCGE-19/OMVPE-19, Keystone, CO, July 28-August 2, 2019.

 “β-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system” Nazar Orishchin, Fikadu Alema and Andrei Osinsky, CS-MANTECH, Minneapolis, MN, April 29th -May 2nd  2019

“Low background impurity in MOCVD grown β-Ga2O3Andrei Osinsky, Fikadu Alema, Akhil Mauze, James Speck, WOCSEMMAD 2019

“Advances toward industrial compatible epitaxial growth of β-Ga2O3  and alloys for power electronics” R. Miller, F. Alema, A. Osinsky, Paper presented at the CS-MANTECH, Austin, TX, 7–10 May 2018

“Device quality β-Ga2O3 and β-(AlxGa1-x)2O3  heterostructures—control of doping and impurity incorporation in MOCVD process” F. Alema, A. Osinsky, Y. Zhang, A. Mauze, J.S. Speck, Paper presented at Material Research Society, Boston, MA, 25–28 November 2018.

“High Performance β-Ga2O3 based vertical solar blind Schottky Photodiode” Fikadu Alema, Brain Hertog, Andrei Osinsky, Yuewei Zhang, Akhil Mauze, James S. Speck, Partha Mukhopadhyay, and Winston V. Schoenfeld, MRS Fall 2018, Boston, MA.

 “MOCVD growth of high-quality epitaxial β-Ga2O3 and related alloy structures” Fikadu Alema, Ross Miller, Andrei Osinsky, Akhil Mauze, James Speck, ICMOVPE XIX, Nara, Japan, June 3-8, 2018

“Growth of Ga2O3 and AlGaO epitaxial structures by MOCVD” Andrei Osinsky, Fikadu Alema, Ross Miller, Akhil Mauze, James Speck, Invited Paper 10533-8, SPIE Photonics West, San Francisco, CA,27 January-1February 2018

“Commercial MOCVD for The Growth of High Quality Epitaxial β-Ga2O3 and Related Alloys” Ross Miller, Fikadu Alema and Andrei Osinsky, IWGO 2018

“Transport Studies of Unintentionally Doped MOCVD grown β-Ga2O3” Adam T. Neal, Shin Mou, Fikadu Alema, Andrei Osinsky, John D. Blevins, Kelson D. Chabak, Gregg H. Jessen, IWGO 2018

“Device quality β-(AlxGa1-x)2O3/β-Ga2O3 heterostructures grown by MOCVD” F. Alema, R.Miller, A. Osinsky, Akhil Mauze, James S. Speck, Adam T. Neal, and Shin Mou, IWGO 2018

“β-Ga2O3 and β-(Alx, Ga1-x)2O3 by MOCVD” A. Osinsky, F. Alema, R. Miller, Akhil Mauze, James Speck, WOCSEMMAD 2018

“Bandgap Engineering and MOCVD Growth of High-Quality β-(Al,Ga)2O3/Ga2O3 Heterostructures for Power Switches” A. Osinsky, F. Alema, B. Hertog, E. Ahmadi, F. Wu, J. Speck, B. H Nieters, T. Vogt, MRS Fall 2017, Boston, MA.

“High-Quality Epitaxial β-Ga2O3 Growth by Close Coupled Showerhead MOCVD”  F. Alema, B. HertogA. Osinsky, E. Ahmadi, F. Wu, J. Speck, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, MRS Fall 2017, Boston, MA.

“Experimental Study and Modeling of Ga2O3Epitaxial Growth by MOCVD in a CIS Reactor”, M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B. Hertog, and A. Osinsky, IWGO 2017, Parma, Italy.

“Epitaxial Growth of Ga2O3 by Metal Organic Chemical Vapor Deposition from Various Precursors,” F. Alema, O. Ledyaev, R. Miller, B. Hertog, A. Osinsky, and Winston V. Schoenfeld, ICMOVPE-XVIII, San Diego, CA July 10-15, 2016.

“Pulsed-MOCVD Epitaxial Growth of High Quality, High Mg Content MgZnO Thin Film,” F. Alema, O. Ledyaev, R. Miller, B. Hertog, A. Osinsky, and W. V. Schoenfeld, ICMOVPE-XVIII, San Diego, CA July 10-15, 2016.

“Substrate Temperature Induced Band Gap Tuning of MgZnO via Pulsed Metal Organic Chemical Vapor Deposition (PMOCVD),” F.Alema, O. Ledyaev, R. Miller, V. Beletsky, B. Hertog, A. Osinsky, W. V. Schoenfeld, MRS Spring 2018, Phoenix, AZ, March 28-April 1, 2016.

“Epitaxial Growth of Ga2O3 By MOCVD Using Oxygen: Experimental Study and Model Verification” M. Bogdanov, A. Lobanova, R. Talalaev, A. Galyukov, F. Alema, B.Hertog, A. Osinsky, ACCGE-21, 2016. Santa Fe, NM.

“Epitaxial β-Ga2O3 thin Film by Metal Organic Chemical Vapor Deposition” F. Alema, B. Hertog, O. Ledyaev, G. Thoma, R. Miller, A. Osinsky, P. Mukhopadhyay, W.V. Schoenfeld, MRS Fall 2016, Boston, MA,

“Pulsed-Metal Organic Chemical Vapor Deposition (PMOCVD) for the Growth of Single Phase Wurtzite MgxZn1-xO Epitaxial Film with High Mg Content (x=0.51),” F. Alema, O. Ledyaev, R. Miller, V. Beletsky, A. Osinsky, and W.V. Schoenfeld, MRS Fall 2015, Boston, MA. November 29-December 4, 2015.

“Growth of High Mg Content MgxZn1-xO Epitaxial Film via Pulsed-Metal Organic Chemical Vapor Deposition (MOCVD),” F. Alema, O. Ledyaev, R. Miller, and A. Osinsky, European Material Research Society, Lille, France, May 11-15, 2015.

III-N Materials, Structures, and Devices

“Polarization-mediated Debye-screening of surface potential fluctuations in dual-channel AlN/GaN high electron mobility transistors”, D. DeenR. MillerA. Osinsky, B. Downey, D. Storm, D. Meyer, D. Katzer, N. Nepal, J. Appl. Phys. 120, 235704, 2016.

“Debye screening of interfacial potential fluctuations by polarization-mediated passivation in dual-channel AlN/GaN high electron mobility transistors,” , D.A. Deen, R.A. Miller, A.V. Osinsky, B.P. Downey, D.F. Storm, D.J. Meyer, N. Nepal, D.S. Katzer, submitted to Journal of Applied Physics, 2015.

“Bimodal wireless sensing with dual-channel wide bandgap heterostructure varactors,” D.A. Deen, A.V. Osinsky, R.A. Miller, Appl. Phys. Lett. 104, 093506, 2014.

“Enhanced AlN nanostructures for pyroelectric sensors,” Crisman, A. Drehman, R.A. Miller, A.V. Osinsky, D. Volovik, V. Vasilyev, physica status solidi (c), Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10), Volume 11, Issue 3-4, pages 517–520, April 2014.

“N-polar AlN thin layers grown on Si(111) by plasma-assisted MBE,” O. Ledyaev, M. Pandikunta, and S. A. Nikishin, Jpn. J. Appl. Phys. 53, 050306, 2014.

“Structural analysis of N-polar AlN layers grown on Si(111) substrates by high resolution X-ray diffraction,” M. Pandikunta, O. Ledyaev, V. Kuryatkov, and S. A. Nikishin, Phys. Stat. Sol. (c) 11, 487, 2014.

“Characterization of HVPE-grown UV LED heterostructures,” Kurin, A. Antipov, I Barash, A. Roenkov, A. Usikov, H. Helava, V. Ratnikov, N. Shmidt, A. Sakharov, S Tarasov, E. Menkovich, I. Lamkin, B. Papchenko and Y. Makarov, physica status solidi (c), Special Issue: 10th International Conference on Nitride Semiconductors (ICNS-10), Volume 11, Issue 3-4, pages 813–816, April 2014.

“Temperature stability of high-resistivity GaN buffer layers grown by metalorganic chemical vapor deposition,” Y. Polyakov,N. B. Smirnov, E. A. Kozhukhova, A.V. Osinsky and S. J. Pearton, J. Vac. Sci. Technol. B 31, 051208, 2013.

“High Electron Velocity Submicrometer AlN/GaN MOS-HEMTs on Freestanding GaN Substrates”, D. J. Meyer, D.A. Deen, D. F. Storm, M. G. Ancona, D. S. Katzer, R. Bass, J. A. Roussos, B. P. Downey, S. C. Binari, T. Gougousi, T. Paskova, E. A. Preble, K. R. Evans, IEEE Elec. Dev. Lett. Vol. 34, No. 2, Feb. 2013. 

“AlN/GaN HEMTs with high-k ALD HfO2 or Ta2O5 gate insulation”, D. A. Deen, D. Storm, D. Meyer, D.S. Katzer, R. Bass, S. Binari. T. Gougousi, Phys. Stat. Sol. C 8, 2420, 2011. 

“Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors”, D.A. Deen, D.F. Storm, R. Bass, D.J. Meyer, D.S. Katzer, S.C. Binari, J.W. Lacis, T. Gougousi, Appl. Phys. Lett. 98, 023506, 2010.

“AlN/GaN insulated gate HEMTs with HfO2 gate dielectric”, D.A. Deen, S.C. Binari, D.F. Storm, D.S. Katzer, J.A. Roussos, J.C. Hackley, T. Gougousi, Elec. Lett. 45, 8, 2009.

“AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance”, T. Zimmermann, D.A.  Deen, Y. Cao, J. Simon, P. Fay, D. Jena, H. Xing, IEEE Elec. Dev. Lett. 29, 7, 2008. 

“Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures,”A. M. Dabiran, A. M. Wowchak, A.V.  Osinsky, J. Xie, B. Hertog, B. Cui, D. C. Look, and P. P. Chow, Appl. Phys. Lett. 93, 082111, 2008. 

“Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors,” X. Yu, C. Li, Z.N. Low, J. Lin, T.J. Anderson, H.T. Wang, F. Ren, , Y.L. Wang, C.Y. Chang, S.J. Pearton, C.H. Hsud, A.V. Osinsky, A. Dabiran, P. Chow, C. Balaban, J. Painterg, Sensors and Actuators B: Chemical, Volume 135, Issue 1, 10 December 2008.

“Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures,” A. M. Dabiran, A. M. Wowchak, A.V. Osinsky, J. Xie, B. Hertog, B. Cui, D. C. Look, and P. P. Chow, Appl. Phys. Lett. 93, 082111, 2008. 

“ALD Al2O3 passivated MBE-grown AlGaN/GaN HEMTs on 6H-SiC,” D.H. Kim, V. Kumar, G. Chen, A.M. Dabiran, M. Wowchak,  A.V. Osinsky,  I. Adesida, Electronics Letters, Volume 43, Issue 2, January 2007. 

“Investigation of n-GaN/p-SiC/n-SiC heterostructures,” A. A. Lebedev, O.  Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, A. E. Nikolaev, A. S. Zubrilov, A. A. Volkova, J. Cryst. Growth 300, 239, 2007.

“Growth and investigation of n-AIGaN/p-6H-SiC/n-6H-SiC heterostructures,” A. A. Lebedev, O. Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, A. E. Cherenkov, A. E. Nikolaev, A. S. Zubrilov, N. V. Seredova, A. A. Volkova, Mater. Sci. Forum 527-529, 1537, 2006. 

“Robust detection of hydrogen using differential AlGaN/GaN high electron mobility transistor sensing diodes,”Hung-Ta Wang, T. J. Anderson, F. Ren, Changzhi Li, Zhen-Ning Low, Jenshan Lin, B. P. Gila, S. J. Pearton, A.V. Osinsky, and Amir Dabiran Appl. Phys. Lett. 89, 242111, 2006. 

“Simulation and Fabrication of ZnMgO/ZnCdO and ZnO/GaN Light Emitting Diodes,” Sang Youn Han, H. S. Yang, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, F. Ren, A.V. Osinsky, J. W. Dong, B. Hertog, A. M. Dabiran, P. P. Chow, L. Chernyak, T. Steiner, C. J. Kao and G. C. Chi, ECS Meeting, Cancun, Mexico, October 29-November 3, 2006. 

“Electrical properties of n-GaN/p-SiC heterojunctions,” O. Ledyaev, A. M. Strel’chuk, A. N. Kuznetsov, N. V. Seredova, A. S. Zubrilov, A. A. Volkova, A. E. Nikolaev, and A. A. Lebedev, Semiconductors 39, 1403, 2005. 

“Optimization of conductivity in p-type GaN/InGaN-graded superlattices,”M. Z. Kauser, A.V. Osinsky, A. M. Dabiran, and S. J. Pearton, J. Appl. Phys. 97, 083715, 2005.

“Electrical detection of immobilized proteins with ungated AlGaN/GaN high-electron-mobility Transistors,”B. S. Kang, F. Ren, L. Wang, C. Lofton, Weihong W. Tan, S. J. Pearton, A. Dabiran, A.V. Osinsky, and P. P. Chow Appl. Phys. Lett. 87, 023508, 2005.

“Carrier trapping and thermal effects in GaN-based high-electron mobility transistors”, A.M. Dabiran, A.V. Osinsky, P.P. Chow, Z. Zhang, A. Madjar, S. Osinsky, J.C.M. Hwang,  R.C. Fitch, J. Gillespie, G. Jessen, N. Moser, A. Cespo, , Electrochem. Soc. Proc. 380, 2004. 

“Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors Fitch”, R.C. Gillespie, J.K.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A.M.; Chow, P.P.; Osinsky, A.V.; La Roche, J.R.; Ren, F.; Pearton, S.J. Source: App. Phys. Lett. 84, 1495, 2004.

“Properties of AlN layers grown on SiC substrates in wide temperature range by HVPE,” O. Ledyaev, A. E. Cherenkov, A. E. Nikolaev, I. P. Nikitina, N. I. Kuznesov, M. S. Dunaevski, A. N. Titkov and V. A. Dmitriev, Phys. Stat. Sol. (c) 0, 474, 2002.

“Photoelectrical properties of AlGaN epitaxial layers grown by HVPE,” G. A. Onushkin, A. E. Nikolaev, A. V. Fomin, O. Ledyaev, A. E. Cherenkov, E. V. Kalinina, I. P. Nikitina, O. V. Kovalenkov and V. A. Dmitriev, Phys. Stat. Sol. (c) 0, 465, 2002.

“Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy,” Chuong A. Tran, A.V. Osinski, R. F. Karlicek Jr., I. Berishev, Appl. Phys. Lett. 75, 1494, 1999.

“Self-heating in high-power AlGaN-GaN HFETs”, Remis Gaska, Andrei V. Osinsky, Jin-Wei Yang, Michael S Shur,. Electron Device Letters, IEEE; V19  , pages 89 – 91, 1998.

“Schottky barrier photodetectors based on AlGaN,” A.V. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D. V. Kuksenkov and H. Temkin, Appl. Phys. Lett., 72, 742, 1998.

“High-temperature performance of AlGaN/GaN HFETs on SiC substrates”, Remis Gaska, Qisheng Chen,  Jin-Wei W Yang, Andrei V. Osinsky,. M. Asif Khan , Michuel S Shur, Electron Device Letters, IEEE, V 18 , 1997.

“High-temperature performance of AlGaN/GaN HFETs on SiC substrates”, R. Gaska,  Q. Chen,  J.W. Yang, Andrei V. Osinsky, M. Asif Khan, Michuel S Shur, Electron Device Letters, IEEE, V 18 , 1997.

“Low noise p-p-n GaN ultraviolet photodetectors,” A.V. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov and H. Temkin, Appl. Phys. Lett. 71, 2334, 1997.

Publications Using Agnitron Products

“Schottky Barrier Height Engineering In β-Ga2O3 Using SiO2 Interlayer Dielectric”, Arkka Bhattacharyya ; Praneeth Ranga ; Muad Saleh ; Saurav Roy ; Michael A. Scarpulla ; Kelvin G. Lynn ; Sriram Krishnamoorthy,  IEEE Journal of Electron Device Society (Accepted for publication, 2020)

“Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy.” Ranga, Praneeth, Bhattacharyya, Arkka, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A. Scarpulla, Daniel F. Feezell, and Sriram Krishnamoorthy, Applied Physics Express 13, 045501 (2020).

“Full bandgap defect state characterization of β-Ga2O3 grown by metal organic chemical vapor deposition” Hemant Ghadi, Joe F. McGlone, Christine M. Jackson, Esmat Farzana, Zixuan Feng, A. F. M. Anhar Uddin Bhuiyan,  Hongping Zhao, Aaron R. Arehart, and Steven A. Ringel, APL Materials 8, 021111 (2020)

“Si-doped β-(Al0.26Ga0.74)2O3 thin films and heterostructures grown by metalorganic vapor-phase epitaxy.” Ranga Praneeth, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, and Sriram Krishnamoorthy,  Applied Physics Express 12, 111004 (2019).

“Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4” Benthara Hewage Dinushi Jayatunga, Md Rezaul Karim, Rebecca A Lalk, Okey Ohanaka, Walter RL Lambrecht, Hongping Zhao, Kathleen Kash, Crystal Growth & Design, 20, 189 (2019)

“Metal–Organic Chemical Vapor Deposition Growth of ZnGeN2 Films on Sapphire” Md Rezaul Karim, Benthara Hewage Dinushi Jayatunga, Zixuan Feng, Kathleen Kash, Hongping Zhao, Crystal Growth & Design, 19, 4661(2019)

“MOCVD epitaxy of β-(AlxGa1−x)2O3 thin films on (010)Ga2O3 substrates and N-type doping” AFM Anhar Uddin Bhuiyan, Zixuan Feng, Jared M Johnson, Zhaoying Chen, Hsien-Lien Huang, Jinwoo Hwang, Hongping Zhao, Applied Physics Letters, 115, 120602 (2019)

“MOCVD homoepitaxy of Si-doped (010) β-Ga2O3 thin films with superior transport properties” Zixuan Feng, AFM Anhar Uddin Bhuiyan, Md Rezaul Karim, Hongping Zhao, Applied Physics Letters, 114, 250601 (2019)

“Epitaxial Growth of High Quality GaN Films on Lattice Matched Metallic Layers,” A.M. Dabirana, F. Machucaa, I. Dea, R. Weissa, ECS Trans., volume 66, issue 1, 113-117, 2015.

“Characterization of an Mg-implanted GaN p–i–n diode,” D. Greenlee, T.J. Anderson, B.N. Feigelson, K.D. Hobart, F.J. Kub, physica status solidi (a), Article first published online: July 30, 2015.

“Symmetric Multicycle Rapid Thermal Annealing: Enhanced Activation of Implanted Dopants in GaN,” J.D. Greenleea, B.N. Feigelson, T.J. Anderson, J.K. Hite, K.D. Hobart, F.J. Kubb, Solid State Sci. Technol., volume 4, issue 9,  P382-P386, 2015.

“High-speed photo-modulated spindt cathode for FELs,” C. Holland, P. Schwoebel, Todd, C.Spindt, IEEE Vacuum Nanoelectronics Conference (IVNC), 2013 26th International, July 2013.

*Some listed papers are published by staff prior to joining Agnitron and thus are representative of expertise and areas of activity of our staff.

Resources

Control Software Info Sheet
IMPERIUM-MOCVD™ is a windows based software package developed for upgrading legacy MOCVD tools for state of the art processing at a fraction the cost of purchasing a new system.

MOCVD System Upgrades
In contrast to other legacy equipment vendors Agnitron offers already upgraded and customized systems located at out facility in Eden Prairie, MN. Systems are powered up and available for demonstration.

Compact MOCVD System
The Agilis is a state of the art small volume, high temperature reactor MOCVD system for III-Nitride processing. This compact system is ideal for materials research and development.