Agilis GOX series equipment can be configured to grow for the growth of Gallium Oxide and AlGaO epitaxial films.
The Agilis technology is based on the highly developed Rotating Disc Reactor (RDR) vertical growth chamber pioneered by several of the principles of Agnitron. The Agilis RDR by design can accommodate a wide variety of wafer sizes and configurations which vary based on customer requirements.
GOX300: Supporting a 305mm wafer carrier with multiple wafer configuration options.
Please inquire if specific custom reactor / wafer count size needed.
The RDR enhanced with the Agilis technology is ideal for any device which requires concise, rapid switching, reduced recirculation, and precise temperature control relying on the industry’s most advanced ECP (Emissivity Compensated Pyrometry).
Agnitron GOX Series system provides repeatability and reproducibility to the highest degree; Uniformity of deposition thickness, doping distribution, alloy composition, all with minimal particle count. The unique feature of the Agilis RDR is that control the flow dynamics represses recirculation leaving the areas above the wafer clean and free of deposition; further through material science and design engineering coatings in the chamber anywhere are less apt to find its way to the wafer surface.
Specification customization to customer preferences has been a key to our success. It is to be accommodated whenever possible.
Up to 12 metal organic sources available based on customer specification and configuration
Typical system to include transfer chamber with robotic arm, loading chamber, and closed-loop purification glovebox workstation.
Source channels offered with regular, diluted, or double diluted network configurations.
Fast switching separate vent / run injection manifolds for group III, V, and dopant precursors.
Automatically pressure balanced vent / run lines with industry leading rapid switching software control.
Compact design provides for minimal dead space, reliable processing and requires minimal maintenance.
All system delivered come with either basic or more extensive material demonstrations which are mutually agreed upon Agnitron and the customer.
The tool meets all SEMI industry and metal organic chemical safety requirements. Safety is priority. Toxic gas detection (in the load lock chamber and elsewhere as requested/required) and combustible gas detection are provided on the tool and integrated into the control system. Additional channels may be added outside or within the system cabinetry per customer preferences.
In-situ control capabilities is one of Agnitron’s trademark features. Of course, full data capture capability is displayed real-time and stored for all control elements of the tool. The data logging files are stored in a SQL database for extraction by various process control tools or customers individual data processing requirements. In addition to onboard flow and pressure control, Agnitron has developed a sophisticate, robust ECP (emissivity compensated pyrometer-single and dual wavelength versions) to provide unparalleled in-situ temperature control particularly for highly sensitive GaN and AsP based alloy material systems. Additionally, to the reflectivity control provided the AgniTemp® ECP is completely digital and is fully integrated into the Imperium® control system for precise temperature control.
The Agilis deploys and acoustical based binary gas monitoring system also fully integrated into Imperium® to give customers full confidence in the flux of precursors reaching the surface of the wafer.
One of the driving attributes is the Agilis ability to utilize the RDR and control the contributing factors to suppress recirculation to a minimum. The process engineers use a tool developed to help design recipes which accounts for the inverse relationship of the boundary layer to pressure and use rotation speed and carrier gas flow to increase interface abruptness and reduce particle generation. Rotation speeds vary based on growth conditions, but the tool can reach 1500 RPM.
Agilis GOX series utilizers restive heating capable of temperatures up to 900 °C
Agilis GOX series uses a multi-zone approach with each zone actively controlled with an ECP for full control to within +/- 0.5C.
System is capable of loading and unloading multiple wafer carriers using a state-of-the-art semiconductor industry leading robotic arm
Dwell stations for loading and unloading of platters
Up to 4x wafer carriers can be loaded into the system at any given time for efficient steady state campaign operations
To avoid wafers, wafer carriers, or the load lock/growth chamber being exposed to air(moisture) Agilis features closed-loop purification glovebox workstations for controlled environment.
Glovebox controls integrated with automated electronic control system.
Please see parts / services tab in Agnitron’s website.
Agnitron sells custom wafer carrier designs that can be optimally designed to meet customer specifications.
*Present examples of all unique / standard A300/455 wafer carriers* Yes show them with sample ¼ wafer coupons as well
Precision control and awareness of system performance are critical to advanced processing:
Agnitron supplied MOCVD systems are integrated with Imperium® Process Control Software and Automation and Beckhoff Automation PLC hardware. This combination represents a robust architecture with tremendous flexibility to support your process wherever your data leads with digital device communication enhancing recipe editing and data analysis.
Combine the power of advanced metrology and Imperium® for precision monitoring and control:
Imperium® Control Packages can be seamlessly integrated with a variety of in-situ metrology tools such as reflectometry and Emissivity Compensated Pyrometry (ECP) from all leading suppliers for monitoring and / or feedback control operation. Of course, Agnitron’s own leading ECP (AgniTemp®) is available to all customers as well. To increase temperature stability and process reproducibility Imperium® is offered with closed-loop feedback control of temperature during recipe execution using either emissivity corrected, or non-emissivity corrected pyrometers.
Safety is paramount and reliability is key:
System includes hazardous gas detection and safety alarms. The Imperium Control Software and Automation and Beckhoff PLC architecture offers a streamlined Windows OS based control environment and supports all industry standard analog and digital device and drive communication protocols. The Beckhoff proprietary TwinCat3 environment offers a software-based PLC function to ensure maximum control system stability. Even to the extent that if window’s environment “blue screens” during recipe execution of the system, the process will continue to run autonomously unaffected and complete the run safely
Using latest industry automation control communication for gas panel devices (MFCs / PCUs).
All purchased Agilis 100 MOCVD systems include the following standard factory and field support services to help customers quickly start materials study and keep equipment operating:
- Operation and maintenance training at Agnitron facility
- Pre-shipment qualification and checkout
- Documentation and remote support for facility requirements/preparation
- System startup and growth demo at customer site
- Standard bronze system warranty (upgradeable per request)
Ongoing parts and field services support. This is helped Agnitron maintains a seasoned staff of mechanical engineers and technicians as well as Chemical Engineer trained process engineers. The Agnitron team has more than a century of experience in the principals alone. Agnitron provides a long-term approach to its spares and service business, and we can accommodate a variety of arrangements to be sure our customers are sufficiently supported remotely and on-site.
One of the best ways to keep any MOCVD tool at peak production is through preventive maintenance. Agnitron supports these services worldwide as well.
These great results have been all grown on Agnitron OEM R&D specialized MOCVD systems. Currently Agnitron offers 3 separate MOCVDs designed for the growth of ß-Ga2O3: Agilis 100, 500, and 700 series. The Agilis 100 is a single wafer R&D MOCVD for wafers up to 3 inches in diameter, the 500 is sized for up to 5 x 2-inch diameter wafers, and the 700 is sized for up to 7 x 2 -inch diameter wafers. All systems come with our record setting recipes / processes and decades of stress free and low-cost future equipment support / maintenance.
All systems are capable of wafer rotation up to 1,500 RPM and now come with available close injection showerhead (CIS) gas distribution systems based on customer specification. The close injection shower head allows for the minimization of gas phase reaction of precursors which are used for growth of oxide materials. The Agilis 100 is the only system that is also offered with a remote injection showerhead (RIS). The Agilis systems utilize either restive or induction heating depending on the configuration of the system model. For the Agilis 100, induction heating is used, which allows for the temperatures of the wafer carrier to get up to 1,700 °C based on customer specification. The multi-wafer Agilis 500 and 700 tools both utilize resistive heaters with the option of a multi-zone heater. This heater configuration allows for each zone actively controlled with either Emissivity Compensated Pyrometry (ECP) or thermocouples based on specification to be within +/- 0.2 °C.
The Agilis 100 has just been updated to its latest generation of reactor design for the growth of ß-Ga2O3. These latest generational updates include but are not limited to a larger maximum wafer size (up to 3” diameter), much faster rotation (1,500 RPM available for first time on Agilis 100), and further improvements in the gas injection to provide the process conditions needed to achieve world class ß-Ga2O3 material growth including a brand-new CIS (Close injection Showerhead) for ß-Ga2O3 growth. Customers attracted in a dual module system, two separate Agilis systems, can now be combined via a transfer mechanism in vacuum through the loading chamber to double the capabilities of the system. Agnitron’s academic research clients appreciate the flexibility of the Agilis systems for their boundless potential for versatile experimentations. The Agilis platform is extremely configurable, and all systems incorporate a vertical reactor geometry that can be reconfigured for the growth of various materials besides just ß-Ga2O3 such as: AlN, AlGaN, GaN, InGaN, MgZnO, ZnO, III-IV compounds, TMD[MoS2, MoSe2, WS2, WSe], 2-D BN, Phosphorene, and SiC. The Agilis modular design can be fitted with up to 12 MO sources and will have the capability for switching of MO sources in minutes. All systems are available with source channels offered with regular, diluted, or double diluted network configurations along with fast switching separate vent / run injection manifolds for different group and dopant precursors. The Agilis system is always offered with automatically pressure balanced vent / run lines with industry leading rapid switching software control. Additionally, an ALD configuration is available if requested. The Agilis systems can be custom fit to match with an individual’s requirements, budget, and facility constraints. All three Agilis models feature the same dimensional compact footprint. This design provides for reliable processing and requires minimal maintenance. Specification customization to customer preferences has been a key to our success. It is to be accommodated whenever possible!