Agnitron Technology has been exclusively awarded the Phase II contract for the SBIR program after completing major strides throughout the course of a 2020 and 2021 Office of Naval Research (ONR) sponsored SBIR P1 base and option period programs.
The program is focused on continuing the work done by Agnitron in the early stages of the program which was to design a system that would be able to reliability and efficiently remove Mg implantation induced damage in GaN and electrically activate holes. This technique would require a tool that would be able to utilize a combination of multiple sub-second heating and cooling cycles to achieve an extended time at a temperature above the thermodynamically stable regime for GaN at a high N2 pressure to preserve the GaN. This program will include a major milestone of delivering the Ultrafast Rapid Thermal Annealing System to the Naval Research Laboratory (NRL) to support work for wide bandgap devices based on GaN materials.
Agnitron’s diverse portfolio of GaN MOCVD equipment design and process expertise with options for both R&D and production applications will serve as a foundation for the program. The program primary technical contact will be Agnitron Engineering Manager, Mr. Aaron Fine, whom had the following statement: “We are excited to qualify and deliver this new system that will have the potential implications for far-reaching effects on the GaN field.” This work is funded by contract number N68335-22-C-0112 under the direction of Lynn Petersen.