Agnitron to attend the upcoming 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI) delivering four presentations.

The 21st International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE XXI) is scheduled for May 12-17, 2024 in Las Vegas, Nevada.  Agnitron will be represented by Dr. Andrei Osinsky and Mr. William Brand, presenting two papers and two posters.

The first two topics to be presented by Agnitron will be on nitride materials systems and will be delivered by Dr. Andrei Osinsky, the president and CEO at Agnitron Technology. The first paper, titled “MOCVD Growth of Epitaxial Ferroelectric ScAlN and Related Alloys,” will discuss the use of specialized MOCVD reactor to grow ferroelectric nitrides such as ScAlN and YAlN. The growth of these materials using the commercial MOCVD poses challenges due to the absence of Sc/Y metal-organic precursors with high vapor pressure. The presentation highlights the need for specialized high-temperature precursor delivery modules and the impact of process conditions on efficiently incorporating Sc or Y into the lattice of AlN. Additionally, Dr. Osinsky will discuss the characteristics of HEMTs and ferroelectric devices based on MOCVD-grown ScAlN.

Dr. Osinsky’s second topic is “Large Area III-Nitride Device Structures on h-BN—Growth, Exfoliation and Transfer to Different Substrates.” The presentation will cover recent advancements in the MOCVD growth of two-dimensional h-BN films on wafers as large as 100 mm and the growth of GaN and AlGaN/GaN HEMTs on top of them. It will also include a discussion of transferring these materials onto alternative substrates.

The other two topics will be based on the MOCVD of β-Ga2O3 and will be presented by Mr. William Brand, a process engineer at Agnitorn Technology. The first topic Mr. Brand will present is “Recent Advances in Uniform Growth and Doping of β-Ga2O3 Using MOVPE.” This work will discuss recent advancements in Ga­2O3 growth, employing a patented, innovative close-injection showerhead (CIS) design. This work highlights the growth of high-quality β-Ga2O3  thin films at a growth rate of up to 20 µm/hr while maintaining excellent thickness and doping uniformities, critical for the growth of thick vertical devices and scaling up the process to large substrates.

Mr. Brand’s second topic is on achieving compensative doping in Ga2O3 using nitrogen. The paper’s title is “Compensative Nitrogen Doping of β-Ga2O3 by MOVPE.” The presentation focuses on using various nitrogen sources for nitrogen doping in MOVPE of Ga2O3, which is crucial for various applications, including the efficient interface compensation needed to realize effective devices.

Agnitron Technology, Inc., is a compound semiconductor technology company that supports the needs of R&D and production users related to MOCVD equipment. We strive to deliver products and services that enable the development of advanced semiconductor materials, device technologies, and products that improve quality of life and the environment.

For more information about Agnitron Technology and its groundbreaking work in the compound semiconductor industry, please visit the company’s website at

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