Agnitron Secures Prestigious AFRL Contract for Advancing Next-Gen Microwave Electronics with Ga2O3 Epitaxial Structures

The project’s primary focus is on the epitaxial growth of high-quality Ga2O3-based films on large-area substrates, a crucial step towards commercializing high-performance devices, especially for next-gen microwave electronics. The initiative aims to demonstrate a robust and manufacturable Metalorganic Chemical Vapor Deposition (MOCVD) process for growing device-quality epitaxial layers of Ga2O3 and AlGaO in production-scale reactors with wafer sizes of up to 4 inches. Agnitron’s expertise will play a pivotal role in refining the design of a large-area MOCVD system, utilizing the Agilis 700 platform to enable the growth of oxides on large wafers.

“We are excited to collaborate with AFRL on this groundbreaking project, contributing to advancing next-generation microwave electronics. Agnitron’s proven capabilities in materials growth technologies position us as a key player in the realization of high-performance devices with wide-ranging applications,” said Dr. Fikadu Alema, Senior Scientist and PI at Agnitron. This contract further solidifies Agnitron’s reputation as an industry leader in driving innovation in semiconductor materials and epitaxial growth technologies.

About Agnitron: Agnitron, whose headquarters are in Chanhassen, MN, is a pioneer in materials growth technologies, specializing in cutting-edge solutions for semiconductor research and development. Agnitron produces MOCVD equipment along with the processes to meet today’s demanding pursuit of enhanced devices.  With a relentless commitment to innovation, Agnitron empowers its partners and clients to push the boundaries of technology, fostering advancements in various industries. For more information, visit www.agnitron.com.