The Agilis MOCVD platform was expended with new equipment innovation, a dual-use capability, which allows the user to retune the system to grow a different family of semiconductor material with minimum changeover time. Due to the flexibility of Imperium control…
Agnitron will be participating with a poster presentation at CS Mantec conference Thursday May 2nd. Ga2O3 a novel material has remarkable material properties that suits it for applications in high voltage power devices and solar blind photodetectors. We will discuss…
A 2017 Air Force (AFRL) SBIR Phase I program “Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications” awarded Agnitron Technology for the study of Aluminum incorporation in β-Ga2O3 has resulted in a Phase II award monitored by…
Agnitron has been selected by the Office of Naval Research (ONR) for a Phase I SBIR program to develop a next generation III-N MOCVD system. The program objectives will pursue enhanced growth rates, lower background concentrations and higher temperatures and…
New records set for β-Ga2O3 background concentration and bulk film electron mobility. Download a pdf of this press release here. August 21, 2018, Eden Prairie, MN - Agnitron Technology has developed a new metal organic chemical vapor deposition (MOCVD) growth…
Direct download the article from http://data.angel.digital/pdf/Compound_Semiconductor_Issue_4_2018.pdf or find it at https://compoundsemiconductor.net/magazine.
Agnitron’s Agilis MOCVD β-Ga2O3 configuration is now available for general market customers and extends the same system configurations as have been used by the Agnitron team to produce reported works in recent articles and presentations*. The configuration has been extended…
Through the course of a 2017 Office of Naval Research (ONR) sponsored STTR P1 program the Agnitron Technology and UCSB team completed major strides to improve capabilities for Metal Organic Chemical Vapor Deposition (MOCVD) growth of high crystal quality β-Ga2O3…
CrayoNano AS of Norway partnered with Agnitron Technology for an extended material growth initiative which concluded in October 2017. The growth activities were performed at Agnitron’s MOCVD laboratory and served to jump-start CrayoNano’s technology development activities while awaiting completion of…
Agnitron has expanded their β-Ga2O3 R&D efforts to study incorporation of Aluminum for the purpose of enabling bandgap engineering within the material system. The Phase I program is funded by the Air Force and builds off of related work described…