Agnitron Technology is actively developing several revolutionary material and device technologies. On-site MOCVD growth capabilities enable rapid demonstration of novel techniques utilizing transitional multilayered crystal structures to attain low-cost and high-quality III-V material growth on silicon substrates. In-house advanced device modeling capabilities facilitate optimization of conventional AlN-GaN device designs for normally-off HEMT operation.
Advanced Techniques for Growth of GaN on Silicon
Silicon is considered to be the most attractive substrate material for fabricating large-area cost-sensitive semiconductor devices. Clear cost competitive advantages similarly exist for fabrication of large-area wide bandgap devices such as high power electronic switches and HB LEDs. However, a large thermal expansion coefficient and lattice mismatch exists between GaN and Si. These contrasting material properties cause many challenges for growing low dislocation device quality GaN on Si substrates. A major portion of our research and development is focused on developing techniques for growing III-N materials, namely GaN on Si substrates.
- Application of new strain management multi component alloys for buffer and transition layers
- Application of innovative multicomponent alloy heterostructures for strain reduction in transitional layers
- Proprietary Si-GaN transition technology provides cost-effective large-area device fabrication
- Epitaxial growth techniques for promise to deliver low-cost high-power electronic switches
Optimized III-N and Normally-Off HEMT Devices
A significant market need exists for low-cost high-power electronic switching capabilities. The development of wide band gap compound semiconductor materials shows promise to deliver this performance. Most of AlGaN/GaN High Electron Mobility Transistor (HEMT) compound semiconductor devices used today have been adapted from conventional designs. A major opportunity exists for optimizing these device designs for the unique properties of wide bandgap materials. Agnitron’s current device design optimization projects focus on the following.
- Device modeling and simulation
- Management of crystal polarization fields and induced doping
- Bandgap engineering, heterostructure strain and heat dissipation
- Normally-off HEMT device designs
- Implementation of CMOS technology in the III-Nitride material system
Fabrication and Test of High Power Devices
Agnitron is collaborating with leading academic research groups on high-power device fabrication and testing. Agnitron is adopting newly developed database wafer testing techniques for on wafer testing and data analysis.