Agnitron’s advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.

The following template substrates are available as 2 inch wafers.

  • Undoped GaN layers on c-plane sapphire and Si (111) substrates.
  • Undoped AlN layers on c-plane sapphire or Si (111) substrates.
  • Undoped AlGaN layers on c-plane sapphire or Si (111) substrates.

Note: Si doping is typically used to get heavily doped n-type materials and Mg doping for p-type GaN material.

Please contact sales@agnitron.com for more information.

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Resources

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Control Software Info Sheet
Imperium-MOCVD™ is a windows based software package developed for extending the life of proven legacy MOCVD systems and offers the latest in advanced process and equipment control technology.

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MOCVD System Upgrades
In contrast to other legacy equipment vendors Agnitron offers already upgraded and customized systems located at out facility in Eden Prairie, MN. Systems are powered up and available for demonstration.

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Compact MOCVD System
Agilis is a state-of-art compact R&D MOCVD platform offered with various reactor and hardware configurations for growth of III-V, III-N, II-VI or oxide materials.