Agnitron’s advanced proprietary technology enables cost effective starting substrates for GaN material research and development or device production. This technology utilizes novel techniques which mitigate obstacles that have hindered high quality material growth on readily available substrates that are commonly used in the semiconductor industry.
The following template substrates are available as 2 inch wafers.
- Undoped GaN layers on c-plane sapphire and Si (111) substrates.
- Undoped AlN layers on c-plane sapphire or Si (111) substrates.
- Undoped AlGaN layers on c-plane sapphire or Si (111) substrates.
Note: Si doping is typically used to get heavily doped n-type materials and Mg doping for p-type GaN material.
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