The Agilis MOCVD system delivers state of the art custom R&D processing capabilities in a compact form and is configurable with different reactors specially suited for various III-V, III-N and oxide material sets. This R&D platform provides advanced features typically only found in larger MOCVD systems but with a small footprint ideal for materials research and development.

product information sheet

Growth Applications 

  • AlN
  • AlGaN
  • InGaN
  • ZnO
  • MgZnO
  • b-Ga2O3
  • Transition Metal Dichalcogenides (TMD): MoS2, MoSe2, WS2, WSe2
  • Graphene
  • Phosphorene (black phosphorus)
  • Can be configured for any material growth
  • Can be used for ALD

Device Applications

  • UV LED structures
  • HEMT structures
  • Power electronic device strucutres
  • 2-D materials

System Features

  • Induction heating enables precise high temperature growth up to 1500°C in high temperature models
  • Temperature stabilized injection flange prevents pre-reaction and decomposition of precursors
  • Gas sensors and safety system
  • Standard configuration for metal organic sources with capacity of up to 5 baths
  • Compact streamlined design provides reliable processing and requires minimal maintenance
  • IMPERIUM control software with DeviceNet or PLC I/O platform and MFCs, Baratrons and temperature controllers
AGILIS Compact MOCVD System Footprint

AGILIS Compact MOCVD System Footprint

Reactor Design

  • Vertical quartz tube reactor
  • Water cooled reactor wall and base plate
  • Separate injection for alkyls and hydrides
  • Adjustable distance between gas injection flange and succeptor
  • Differential pumped seals
  • Inductive heating for high temperature growth is controlled by RF coil
  • Capabile of 3 X 2”, 1 X 3″ or 1 X 4″ wafer loading
  • Ferrofuidic pass through with servo motor rotation 0-1500 RPM
  • No graphite within the reactor to minimize boron migration into the grown material

 

 

Enhanced Process Capabilities

  • Substrate heating up to 1500°C
  • Single wafer systems provide across succeptor temperature uniformity of better than 2°C
  • Temperature controlled showerhead
  • Emissivity corrected pyrometer with the feedback control loop to RF heating coil
  • Optical interferometer for insitu growth monitoring
  • Pressure process window: 25-300 Torr
  • Succeptor cool down rate > 100°C per minute
  • Four water cooled temperature controlled chillers
  • Point of use gas purifies for hydrogen, nitrogen and ammonia

Turn-Key MOCVD System

The Agilis compact MOCVD system is offered as a complete turn-key solution available with matched system components based on your system and process needs including:

  • IMPERIUMMOCVD  control software
  • Gas purifiers
  • Gas cabinets
  • Exhaust scrubbers
  • Process cooling water chillers
  • Hazardous gas detection safety systems
  • Engineering support for process development

Resources

Control Software Info Sheet
Imperium-MOCVD™ is a windows based software package developed for extending the life of proven legacy MOCVD systems and offers the latest in advanced process and equipment control technology.

MOCVD System Upgrades
In contrast to other legacy equipment vendors Agnitron offers already upgraded and customized systems located at out facility in Eden Prairie, MN. Systems are powered up and available for demonstration.

Compact MOCVD System
Agilis is a state-of-art compact R&D MOCVD platform offered with various reactor and hardware configurations for growth of III-V, III-N, II-VI or oxide materials.