Agnitron Technology has announced their recent funding proposal, titled “Investigation of Donor and Acceptor Ion Implantation in AlN,” has been selected for a Phase I program by the Department of Energy (DoE) under the FY-2014 Release-2 Small Business Innovation Research (SBIR) Program Solicitation.
The program will focus on implantation in Aluminum Nitride (AlN) which is of interest to the power electronics industry for AlN’s potential to be used in high voltage, low loss, switching applications. Agnitron’s 1500°C MOCVD growth capability will be showcased as well as a new technique known as multicycle rapid thermal annealing (MRTA) which has shown promise in recent work (link to paper here) with implantation of nitride materials at Naval Research Laboratory (NRL). Ion implantation in AlN has the potential to enable new types of devices which have been limited in the past due to the difficulty of doping it during epitaxial growth. Additionally, the ability to select doping type and area in AlN and Gallium Nitride (GaN) will open a new door for device designers to more fully exploit the extraordinary properties of these materials.
Agnitron is partnering in this program with NRL, led by Dr. Boris Feigelson and the University of Florida, led by Professor Stephen Pearton. Agnitron’s High Temperature MOCVD Reactor will be used to grow the AlN films for the project. More information about Agnitron’s High Temperature MOCVD Reactor can be found at the following link: http://agnitron.com/compact-mocvd-system/.
Agnitron Technology, Inc. specializes in developing emerging compound semiconductor material and device technologies into profitable commercial products as well as economical custom MOCVD equipment solutions. Agnitron’s diverse team and partners draw from backgrounds in physics, materials science, semiconductor processing and electrical and mechanical engineering. Collectively, this team is credited with more than 400 published manuscripts and over 50 patents. Visit www.agnitron.com for more information.